To develop the physical model of OLED device, some kinds of measurement and analysis are needed. Therefore we measure and analyze physical characteristic of the OLED cells (red, green, blue, white), for example sheet resistance, J-V characteristic according to the consideration of series resistance, hysteresis resulted from deep trap and capacitance according to voltage and frequency etc. Besides, we measure the transient electroluminescence and transient current as voltage changes.

We propose the method for modeling I-V characteristic of OLED device by using Smart SPICE simulator which is in wide use. This is feasible by the physical characteristics measured (and analyzed) above, and we extract the most heavyweight parameters to make the modeling easy for anybody. In this process, we used RPI poly-Si model (level = 36), which is diode connected, to render the OLED current.

We propose the R-RC-RC model where transient response characteristic is applied by using the model of I-V characteristic proposed above. We extract the five parameters by matching the simulation results to the measured Cole-Cole plots which describe the impedance characteristic of OLED devices. We analyze the influence as parameters are varied, as a result, we can make it possible to describe the transient response characteristic of OLED devices by the SPICE simulation.